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| MPS6521 (NPN) MPS6523 (PNP) MPS6521 is a Preferred Device Amplifier Transistors Features * Voltage and Current are Negative for PNP Transistors * Pb-Free Packages are Available* MAXIMUM RATINGS Rating Collector -Emitter Voltage MPS6521 MPS6523 Collector -Base Voltage MPS6521 MPS6523 Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 - 4.0 100 625 5.0 1.5 12 -55 to +150 - 25 Vdc mAdc mW mW/C W mW/C C 1 2 3 http://onsemi.com COLLECTOR 3 COLLECTOR 3 2 BASE 1 EMITTER 1 EMITTER Symbol VCEO NPN 25 - PNP - 25 Unit Vdc 2 BASE Vdc MARKING DIAGRAM TO-92 CASE 29-11 STYLE 1 MPS 652x AYWW G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient (Printed Circuit Board Mounting) Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS652x = Device Code x = 1 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS6521 MPS6521G MPS6521RLRA MPS6521RLRAG MPS6523 MPS6523G Package TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) Shipping 5000 Units/Box 5000 Units/Box 2000/Tape & Reel 2000/Tape & Reel 5000 Units/Box 5000 Units/Box *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 March, 2006 - Rev. 3 Publication Order Number: MPS6521/D MPS6521 (NPN) MPS6523 (PNP) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector -Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) SMALL- SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k W, Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz) Cobo NF - - 3.5 3.0 pF dB hFE MPS6521 MPS6521 MPS6523 MPS6523 VCE(sat) 150 300 150 300 - - 600 - 600 0.5 Vdc - MPS6521 MPS6523 V(BR)CEO V(BR)EBO ICBO - - 0.05 0.05 25 4.0 - - Vdc Vdc mAdc Symbol Min Max Unit NPN MPS6521 EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% -0.5 V <1.0 ns +10.9 V 10 k 275 10 < t1 < 500 ms DUTY CYCLE = 2% 0 t1 +3.0 V +10.9 V 10 k CS < 4.0 pF* 275 CS < 4.0 pF* -9.1 V < 1.0 ns 1N916 *Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 2 MPS6521 (NPN) MPS6523 (PNP) TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 mA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 mA 10 mA IC = 1.0 mA 300 mA 100 mA BANDWIDTH = 1.0 Hz RS 10 7.0 5.0 10 mA 3.0 100 mA 30 mA Figure 3. Noise Voltage Figure 4. Noise Current NPN MPS6521 NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25C) 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k Figure 5. Narrow Band, 100 Hz 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 1k 10 Hz to 15.7 kHz Figure 6. Narrow Band, 1.0 kHz Noise Figure is defined as: en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) NF + 20 log10 IC, COLLECTOR CURRENT (mA) Figure 7. Wideband http://onsemi.com 3 MPS6521 (NPN) MPS6523 (PNP) NPN MPS6521 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125C h FE , DC CURRENT GAIN 200 25C -55 C 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C IC, COLLECTOR CURRENT (mA) 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 100 TA = 25C PULSE WIDTH = 300 ms 80 DUTY CYCLE 2.0% IB = 500 mA 400 mA 300 mA 200 mA 0.6 60 0.4 40 100 mA 20 0 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 9. Collector Saturation Region Figure 10. Collector Characteristics 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 0.8 *APPLIES for IC/IB hFE/2 25C to 125C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V 0 *qVC for VCE(sat) - 55C to 25C -0.8 25C to 125C -1.6 qVB for VBE 0.2 - 55C to 25C 50 100 VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 -2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltages Figure 12. Temperature Coefficients http://onsemi.com 4 MPS6521 (NPN) MPS6523 (PNP) NPN MPS6521 TYPICAL DYNAMIC CHARACTERISTICS 300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 13. Turn-On Time f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 14. Turn-Off Time 500 TJ = 25C f = 100 MHz 300 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 10 7.0 5.0 Cib Cob TJ = 25C f = 1.0 MHz 3.0 2.0 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current-Gain -- Bandwidth Product Figure 16. Capacitance 20 hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 hfe 200 @ IC = 1.0 mA hoe , OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 17. Input Impedance Figure 18. Output Admittance http://onsemi.com 5 MPS6521 (NPN) MPS6523 (PNP) NPN MPS6521 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 P(pk) t1 t2 FIGURE 20 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) w RqJA TJ(pk) - TA = P(pk) ZqJA(t) 5.0 k 10 k 20 k 50 k 100 k 0.01 0.01 0.02 500 1.0 k 2.0 k t, TIME (ms) Figure 19. Thermal Response 104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 21. A train of periodical power pulses can be represented by the model as shown in Figure 20. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 19 by the steady state value RqJA. Example: The MPS6521 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 22 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms TC = 25C TA = 25C dc 100 ms 10 ms 1.0 s dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 22. http://onsemi.com 6 MPS6521 (NPN) MPS6523 (PNP) PNP MPS6523 TYPICAL NOISE CHARACTERISTICS (VCE = - 5.0 Vdc, TA = 25C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 mA 30 mA 3.0 2.0 1.0 mA 100 mA 300 mA BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 mA 100 mA 30 mA 10 mA IC = 1.0 mA BANDWIDTH = 1.0 Hz RS Figure 23. Noise Voltage Figure 24. Noise Current NOISE FIGURE CONTOURS (VCE = - 5.0 Vdc, TA = 25C) RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0 k BANDWIDTH = 1.0 Hz 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 BANDWIDTH = 1.0 Hz 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0 k Figure 25. Narrow Band, 100 Hz 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA) 0.5 dB Figure 26. Narrow Band, 1.0 kHz RS , SOURCE RESISTANCE (OHMS) 10 Hz to 15.7 kHz Noise Figure is Defined as: en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) NF + 20 log10 Figure 27. Wideband http://onsemi.com 7 MPS6521 (NPN) MPS6523 (PNP) PNP MPS6523 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125C 25C h FE , DC CURRENT GAIN 200 -55 C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 28. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TA = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) 100 TA = 25C PULSE WIDTH = 300 ms 80 DUTY CYCLE 2.0% 300 mA 60 IB = 400 mA 350 mA 250 mA 200 mA 150 mA 0.6 0.4 40 20 0 100 mA 50 mA 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 29. Collector Saturation Region Figure 30. Collector Characteristics 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 - 55C to 25C 0.8 25C to 125C 1.6 qVB for VBE 0.2 - 55C to 25C 50 100 25C to 125C VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 0 0.1 VBE(on) @ VCE = 1.0 V VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 31. "On" Voltages Figure 32. Temperature Coefficients http://onsemi.com 8 MPS6521 (NPN) MPS6523 (PNP) PNP MPS6523 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 10 7.0 5.0 1.0 td @ VBE(off) = 0.5 V tr VCC = 3.0 V IC/IB = 10 TJ = 25C 1000 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 -1.0 ts VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) tf 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 - 20 - 30 - 2.0 - 3.0 - 5.0 - 7.0 -10 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 33. Turn-On Time BANDWIDTH PRODUCT (MHz) Figure 34. Turn-Off Time 500 TJ = 25C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 7.0 Cib 5.0 TJ = 25C 3.0 2.0 Cob f T, CURRENT-GAIN 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 35. Current-Gain -- Bandwidth Product Figure 36. Capacitance 20 hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 MPS6523 hfe 100 @ IC = -1.0 mA MPS6521 hfe 200 @ IC = -1.0 mA hoe , OUTPUT ADMITTANCE (m mhos) VCE = -10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPS6521 hfe 200 @ IC = 1.0 mA MPS6523 hfe 100 @ IC = 1.0 mA 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 37. Input Impedance Figure 38. Output Admittance http://onsemi.com 9 MPS6521 (NPN) MPS6523 (PNP) PNP MPS6523 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 P(pk) t1 t2 FIGURE 40 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) w RqJA TJ(pk) - TA = P(pk) ZqJA(t) 5.0 k 10 k 20 k 50 k 100 k 0.01 0.01 0.02 500 1.0 k 2.0 k t, TIME (ms) Figure 39. Thermal Response 104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 41. A train of periodical power pulses can be represented by the model as shown in Figure 40. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 39 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 39 by the steady state value RqJA. Example: The MPS6523 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 39 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 42 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 39. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms TC = 25C TA = 25C dc 100 ms 10 ms 1.0 s dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 42. http://onsemi.com 10 MPS6521 (NPN) MPS6523 (PNP) PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- K XX G H V 1 D J C SECTION X-X N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 11 MPS6521/D |
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